? semiconductor components industries, llc, 2000 november, 2000 rev. 3 1 publication order number: mty55n20e/d mty55n20e preferred device power mosfet 55 amps, 200 volts nchannel to264 this advanced power mosfet is designed to withstand high energy in the avalanche and commutation modes. this new energy efficient design also offers a draintosource diode with fast recovery time. designed for high voltage, high speed switching applications in power supplies, converters, pwm motor controls, and other inductive loads. the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. ? avalanche energy specified ? diode is characterized for use in bridge circuits ? i dss and v ds(on) specified at elevated temperature maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit drainsource voltage v dss 200 vdc draingate voltage (r gs = 1 m w ) v dgr 200 vdc gatesource voltage continuous nonrepetitive (t p 10 ms) v gs v gsm 20 40 vdc vpk drain current continuous @ t c = 25 c drain current single pulse (t p 10 m s) i d i dm 55 165 adc apk total power dissipation derate above 25 c p d 300 2.38 watts w/ c operating and storage temperature range t j , t stg 55 to 150 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 80 vdc, v gs = 10 vdc, peak i l = 110 apk, l = 0.3 mh, r g = 25 w ) e as 3000 mj thermal resistance junction to case thermal resistance junction to ambient r q jc r q ja 0.42 40 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 55 amperes 200 volts r ds(on) = 28 m w device package shipping ordering information mty55n20e to264 25 units/rail http://onsemi.com preferred devices are recommended choices for future use and best overall value. ll = location code y = year ww = work week marking diagram & pin assignment d g to264 case 340g style 1 mty55n20e nchannel s llyww 1 2 3 1 gate 3 source 2 drain
mty55n20e http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainsource breakdown voltage (v gs = 0, i d = 250 m a) temperature coefficient (positive) v (br)dss 200 250 vdc mv/ c zero gate voltage drain current (v ds = 200 vdc, v gs = 0 vdc) (v ds = 200 vdc, v gs = 0 vdc, t j = 125 c) i dss 10 200 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0) i gss 100 nadc on characteristics (note 1.) gate threshold voltage (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 2 7 4 vdc mv/ c static drainsource onresistance (v gs = 10 vdc, i d = 27.5 adc) r ds(on) 0.028 ohm drainsource onvoltage (v gs = 10 vdc) (i d = 55 adc) (i d = 27.5 adc, t j = 125 c) v ds(on) 1.3 1.6 1.8 vdc forward transconductance (v ds = 10 vdc, i d = 27.5 adc) g fs 30 37 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 7200 10080 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1 mhz ) c oss 1800 2520 reverse transfer capacitance f = 1 mhz) c rss 460 920 switching characteristics (note 2.) turnon delay time t d(on) 33 66 ns rise time (v dd = 100 vdc, i d = 55 adc, v gs =10vdc t r 200 400 turnoff delay time v gs = 10 vdc, r g = 4.7 w ) t d(off) 150 300 fall time r g 4.7 w ) t f 170 340 gate charge (s fi 8) q t 245 343 nc (see figure 8) (v ds = 160 vdc, i d = 55 adc, q 1 33 (v ds 160 vdc , i d 55 adc , v gs = 10 vdc) q 2 128 q 3 79 sourcedrain diode characteristics forward onvoltage (i s = 55 adc, v gs = 0 vdc) (i s = 55 adc, v gs = 0 vdc, t j = 125 c) v sd 0.75 1.1 1.2 vdc reverse recovery time (s fi 14) t rr 310 ns (see figure 14) (i s 55 adc v gs 0 vdc t a 220 (i s = 55 adc, v gs = 0 vdc, di s /dt = 100 a/ m s) t b 90 reverse recovery stored charge di s /dt = 100 a/ m s) q rr 4.6 m c internal package inductance internal drain inductance (measured from the drain lead 0.25 from package to center of die) l d 4.5 nh internal source inductance (measured from the source lead 0.25 from package to source bond pad) l s 13 nh 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature.
mty55n20e http://onsemi.com 3 typical electrical characteristics r ds(on) , drain-to-source resistance (normalized) r ds(on) , drain-to-source resistance (ohms) r ds(on) , drain-to-source resistance (ohms) 10000 1000 100 10 1 0 50 100 150 200 100 c 2 1.75 1.5 1.25 0.5 0 -50 -25 0 25 50 75 100 125 150 0.027 0.026 0.025 0.024 0.023 0.022 i d , drain current (amps) 15 v 0.05 0.04 0.03 0.02 0.01 0 0 40 80 120 100 60 20 120 0 0 0.5 1 1.5 2 2.5 3 3.5 4 v ds , drain-to-source voltage (volts) figure 1. onregion characteristics i d , drain current (amps) i d , drain current (amps) v gs , gate-to-source voltage (volts) figure 2. transfer characteristics i d , drain current (amps) figure 3. onresistance versus drain current and temperature figure 4. onresistance versus drain current and gate voltage t j , junction temperature ( c) figure 5. onresistance variation with temperature v ds , drain-to-source voltage (volts) figure 6. draintosource leakage current versus voltage i dss , leakage (na) 0 t j = 25 c v gs = 10 v v ds 10 v v gs = 10 v t j = 100 c -55 c t j = 25 c v gs = 10 v v gs = 0 v 100 80 60 40 20 120 100 80 60 40 20 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 0 40 80 120 100 60 20 t j = 125 c 8 v 9 v 6 v 5 v 4 v 100 c 25 c t j = -55 c 25 c v gs = 10 v i d = 27.5 a 25 c 1 0.75 0.25 7 v
mty55n20e http://onsemi.com 4 power mosfet switching switching behavior is most easily modeled and predicted by recognizing that the power mosfet is charge controlled. the lengths of various switching intervals ( d t) are determined by how fast the fet input capacitance can be charged by current from the generator. the published capacitance data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) ) can be made from a rudimentary analysis of the drive circuit so that t = q/i g(av) during the rise and fall time interval when switching a resistive load, v gs remains virtually constant at a level known as the plateau voltage, v sgp . therefore, rise and fall times may be approximated by the following: t r = q 2 x r g /(v gg v gsp ) t f = q 2 x r g /v gsp where v gg = the gate drive voltage, which varies from zero to v gg r g = the gate drive resistance and q 2 and v gsp are read from the gate charge curve. during the turnon and turnoff delay times, gate current is not constant. the simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an rc network. the equations are: t d(on) = r g c iss in [v gg /(v gg v gsp )] t d(off) = r g c iss in (v gg /v gsp ) the capacitance (c iss ) is read from the capacitance curve at a voltage corresponding to the offstate condition when calculating t d(on) and is read at a voltage corresponding to the onstate when calculating t d(off) . at high switching speeds, parasitic circuit elements complicate the analysis. the inductance of the mosfet source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. the voltage is determined by ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. the mosfet output capacitance also complicates the mathematics. and finally, mosfets have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. the resistive switching time variation versus gate resistance (figure 9) shows how typical switching performance is affected by the parasitic circuit elements. if the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. the circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. power mosfets may be safely operated into an inductive load; however, snubbing reduces switching losses. 24000 20000 16000 12000 8000 4000 0 10 5 0 5 10 15 20 25 gate-to-source or drain-to-source voltage (volts) c, capacitance (pf) figure 7. capacitance variation v gs v ds v gs = 0 v v ds = 0 v t j = 25 c c iss c rss c iss c oss c rss
mty55n20e http://onsemi.com 5 v ds , drain-to-source voltage (volts) v gs , gate-to-source voltage (volts) 60 50 40 30 20 10 0 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.95 1000 100 10 1 10 100 12 10 8 6 4 2 0 0 50 100 150 200 250 q g , total gate charge (nc) 240 200 160 120 80 40 0 draintosource diode characteristics v sd , source-to-drain voltage (volts) figure 8. gate charge versus gatetosource voltage i s , source current (amps) figure 9. resistive switching time variation versus gate resistance r g , gate resistance (ohms) t, time (ns) figure 10. diode forward voltage versus current qt t j = 25 c i d = 55 a v dd = 100 v i d = 55 a v gs = 10 v t j = 25 c t d(on) t d(off) v gs v ds t f t r 0.9 q1 q3 q2 v gs = 0 v t j = 25 c safe operating area the forward biased safe operating area curves define the maximum simultaneous draintosource voltage and drain current that a transistor can handle safely when it is forward biased. curves are based upon maximum peak junction temperature and a case temperature (t c ) of 25 c. peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in an569, atransient thermal resistancegeneral data and its use.o switching between the offstate and the onstate may traverse any load line provided neither rated peak current (i dm ) nor rated voltage (v dss ) is exceeded and the transition time (t r ,t f ) do not exceed 10 m s. in addition the total power averaged over a complete switching cycle must not exceed (t j(max) t c )/(r q jc ). a power mosfet designated efet can be safely used in switching circuits with unclamped inductive loads. for reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. the energy rating decreases nonlinearly with an increase of peak current in avalanche and peak junction temperature. although many efets can withstand the stress of draintosource avalanche at currents up to rated pulsed current (i dm ), the energy rating is specified at rated continuous current (i d ), in accordance with industry custom. the energy rating must be derated for temperature as shown in the accompanying graph (figure 12). maximum energy at currents below rated continuous i d can safely be assumed to equal the values indicated.
mty55n20e http://onsemi.com 6 safe operating area 1 0.1 0.01 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 t, time (s) d = 0.5 0.2 r (t) , effective transient thermal resistance (normalized) 0.1 0.05 0.02 0.01 3000 2000 1000 0 25 50 75 100 125 15 0 1000 100 10 1 0.1 1 10 100 1000 100 m s 10 m s 1 ms 10 ms dc t j , starting junction temperature ( c) e as , single pulse drain-to-source figure 11. maximum rated forward biased safe operating area v ds , drain-to-source voltage (volts) figure 12. maximum avalanche energy versus starting junction temperature avalanche energy (mj) i d , drain current (amps) r ds(on) limit thermal limit package limit figure 13. thermal response r q jc (t) = r(t) r q jc d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 v gs = 20 v single pulse t c = 25 c i d = 55 a figure 14. diode reverse recovery waveform di/dt t rr t a t p i s 0.25 i s time i s t b single pulse
mty55n20e http://onsemi.com 7 package dimensions style 1: pin 1. gate 2. drain 3. source dim a min max min max inches 28.0 29.0 1.102 1.142 millimeters b 19.3 20.3 0.760 0.800 c 4.7 5.3 0.185 0.209 d 0.93 1.48 0.037 0.058 e 1.9 2.1 0.075 0.083 f 2.2 2.4 0.087 0.102 g 5.45 bsc 0.215 bsc h 2.6 3.0 0.102 0.118 j 0.43 0.78 0.017 0.031 k 17.6 18.8 0.693 0.740 l 11.0 11.4 0.433 0.449 n 3.95 4.75 0.156 0.187 p 2.2 2.6 0.087 0.102 q 3.1 3.5 0.122 0.137 r 2.15 2.35 0.085 0.093 u 6.1 6.5 0.240 0.256 w 2.8 3.2 0.110 0.125 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 0.25 (0.010) m tb m j r h n u l p a k c e f d g w 2 pl 3 pl 0.25 (0.010) m yq s 123 b q y t to264 case 340g02 issue h
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